Features:
• 6 layer PCB
• 433MHz Double Data Rate = 3,500 Mb/sec
• CAS Latency (CL) 2.0
• RAS to CAS Delay (tRCD) 3
• Precharge Delay (tRP) 3
• 2.5volts - 2.8volts
• Double-data-rate architecture; 2 data transfers
per clock cycle
• Serial Presence Detect with EEPROM
• Edge aligned data output, center aligned input
• Lifetime warranty
• Heat Spreader
Ratings:
Ambient Temperature (TA): 0 ~ 70 °C
Storage Temperature (TSTG): -55 ~ 125 °C
Voltage on Any Pin relative to VSS VIN,
VOUT: -0.5 ~ 3.6 V
Voltage on VDD relative to VSS VDD: -0.5 ~ 3.6 V
Voltage on VDDQ relative to VSS VDDQ: -0.5 ~ 3.6
V
Output Short Circuit Current (IOS): 50 mA
Power Dissipation (PD): 9.5 W
D35PA56A2 – 256MB
For the latest data sheet, please visit the Super Talent Electronics
web site: www.supertalentmemory.com
DDR SDRAM
DIMM
Description:
SuperTalent’s D35PA56A2 is a 256MB, PC3500, 32M bit x 64,
Double Data Rate SDRAM memory module. The module is built
with eight 32M x 8 bit 66pin TSOP-II (400 mil) Double Data
Rate SDRAM chips in a single bank, single sided configuration
mounted on a 6-layer 184pin glass-epoxy substrate PCB.
The RAM has been tested in-house on the following chipsets:
VIA K8T800, Intel 875P, ATI RS300 and NVidia NForce3 150
chipsets.
Characteristics:
Row Cycle Time (tRC): 55ns
Auto Refresh Row Cycle Time (tRFC): 70ns
Row Active Time (tRAS): 40ns min 70K ns max
Row Address to Column Address Delay (tRCD): 15ns
Row Active to Row Active Delay (tRRD): 10ns
Column Address to Column Address Delay (tCCD): 1 CLK
Row Precharge Time (tRP): 15 ns
Write Recovery Time (tWR): 15 ns
Last Data-In to Read Command (tDRL): 1 CLK
Auto Precharge Write Recovery + Precharge Time (tDAL): 30 ns
System Clock Cycle Time (tCK):
CAS Latency = 3: 5ns min 10ns max
CAS Latency = 2.5: 6ns min 10ns max
CAS Latency = 2: 7.5ns min 10ns max
Clock High Level Width (tCH): 0.45CLK min 0.55CLK max
Clock Low Level Width (tCL): 0.45CLK min 0.55CLK max
Data-Out edge to Clock edge Skew (tAC): -0.7ns min 0.7ns max